•Low Switching Voltages
•Fast Switching Times
•Low Drain-Source Resistance
•Low Reverse Transfer Capacitance
HANDLING PRECAUTIONS: MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible damage to the device while wiring, testing, or in actual operation, follow the procedures outlined below.
1. To avoid the build-up of static charge, the leads of the devices should remain shorted together with a metal ring except when being tested or used.
2. Avoid unnecessary handling. Pick up devices by the case instead of the leads.
3. Do not insert or remove devices from circuits with the power on as transient voltages may cause permanent damage to the devices
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