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BD139 – Bipolar (BJT) Single Transistor (Pack of 3)



The BD139 from STMicroelectronics is a through hole NPN complementary low voltage transistor in TO-126 (SOT-32) package. This device manufactured in epitaxial planar technology.
Used for audio amplifiers and drivers, utilizing complementary or quasi complementary circuits, and the complementary PNP types are the BD136 and BD140.
  • Collector to emitter voltage (Vce) is 80V
  • Collector current (Ic) is 1.5A
  • Power dissipation (Pd) is 12.5W
  • Collector to emitter saturation voltage of 500mV at 0.5A collector current
  • DC current gain (hFE) of 25 at 0.5A collector current
  • Operating junction temperature range from 150°C

Click Here for the data sheet

Additional information

Weight 100 g