MJE243 Bipolar Transistors – BJT – NPN (Pack of 3)

Description

These devices are designed for low power audio amplifier and low−current, high−speed switching applications.

Features

•High Collector−Emitter Sustaining Voltage

•High DC Current Gain

•Low Collector−Emitter Saturation Voltage

•High Current Gain Bandwidth Product

•Annular Construction for Low Leakages

Click Here for data sheet.