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MJE243 Bipolar Transistors – BJT – NPN (Pack of 3)



These devices are designed for low power audio amplifier and low−current, high−speed switching applications.


•High Collector−Emitter Sustaining Voltage

•High DC Current Gain

•Low Collector−Emitter Saturation Voltage

•High Current Gain Bandwidth Product

•Annular Construction for Low Leakages

Click Here for data sheet.

Additional information

Weight 100 g